Our modern world would be unthinkable without semiconductors—computers, smartphones, autonomous vehicles and countless additional products are based on this technology. Many semiconductors are made of silicon. This metalloid is grown into single crystals, sliced into ca. 1 millimeter thin wafers and, finally, processed into tiny micro-electric systems.
Silicon crystals for semiconductor applications are grown on an industrial scale by either the CZ or the Float Zone method. While Float Zone furnaces usually have no or very few graphite parts in them, the CZ method relies heavily on high purity graphite parts and graphite felt insulation. SGL Carbon has a long-standing history of collaboration with the global leading silicon crystal growth companies. We offer the right materials for graphite and CFRC susceptors, heaters, reflectors, tubes, rigid and soft insulation felts and others.
The growth of SiC single crystals usually involves some kind of physical vapor transport mechanism at very high temperatures in excess of 2400 °C. The graphite materials offered by SGL Carbon are better fitted to work in these extreme environments than any other materials on the market. No matter what your furnace specifics are, if you are looking for SiC powder production as a raw material or at growing SiC boules: SGL Carbon has the right materials for you and can assist in finding the perfect solution.
Sapphire crystals can be grown by many different technologies: HEM, Kyropolous, EFG or even the CZ method. At SGL Carbon we have experience with all of these methods and know which materials work best for which application and furnace. Through our extensive collaboration with companies in the field, we know the pitfalls of reliable sapphire furnace hot zones designs and will be glad to be working with you in the future.
We manufacture our components according to your individual requirements and assist you in planning, design and optimizing your operations. You can rely on our extensive expertise in handling high-purity products, which we can guarantee through extensive certification according to your requirements.
Our portfolio includes heaters, support crucibles, heat shields and insulating components for many single crystal-growing processes and materials.
We also supply susceptors for silicon epitaxy and MOCVD reactors. Known for our consistently high quality and individualized production, we offer application-specific finishing through cleaning, mechanical processing or coating.
Our SIGRABOND tubes and cylinders, being wound or laminated, facilitate lean designs for miscellaneous high-temperature applications by their high tenacity.
For melting semiconductor materials, we provide highly resilient crucibles that convince by high lifetime.
SIGRAFLEX products made from expanded natural graphite are predestined to be used for semiconductor crystal growing at high temperatures in aggressive environments – in particular due to their softness and flexibility, inertness, impermeability, their excellent high-temperature and corrosion resistance as well as outstanding thermal and electrical conductivity.
Benefit from the high purity of our graphites – developed especially for challenging processes like crystal growing, epitaxy, ion implantation and plasma etching, as well as for the production of LED chips.
Our Product Finder for SIGRAFINE Fine-Grain Graphite can help you pre-select the appropriate graphite grades for your application.
SiC for extended lifetime
Our advanced SiC coating extends the lifetime of high-demand parts used in especially challenging applications and environments.