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Semiconductor Crystal Growth

All processes used to grow semiconductor crystals operate at high temperatures in aggressive environments – whether Czochralski (CZ) for silicon, Heat Exchange-Method (HEM) for sapphire or Physical Vapor Transport (PVT) for SiC bulk growth. This is why the hot zones of industrial crystal growth furnaces are generally equipped with heat- and corrosion-resistant graphite components.

And at SGL Carbon we can do more for you than supplying build-to-print parts: Our experts rely on decades of experience to select the best materials at the highest purity to fit into every type of crystal-growing furnace. Together with our Modelling and Simulation Group we offer thermomechanical and gas-flow dynamics optimization of crystal growth furnaces of all kinds.

Contact to our Experts

We are always at your disposal for any kind of questions or suggestions.

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