Our graphite and C/C components offer solutions for numerous challenging application conditions. With the appropriate coating, the limits of the application are pushed further:
The coating improves product quality and increases process efficiency, thus reducing overall operating costs for our custmers. This coating extends the service life of graphite components and achieves the high-purity surface structures required in processing semiconductor materials.
SiC-coated graphite products can be used in numerous applications within the value chain of the semiconductor industry:
We supply SiC-coated products made from high-strength isostatic graphite and carbon fiber-reinforced carbon. These include components for fluidized-bed reactors and STC-TCS converters, as well as reflectors for CZ units and wafer carriers for PECVD, Si epitaxy, and MOCVD units.
Material data of SIGRAFINE SiC Coating
|Structure||beta (cubic) 3C polytype|
|Orientation||Fraction (%)||111 preferred|
|Fracture toughness||MPa m1/2||3.0|
|Thermal expansion 100–600 °C (212–1112 °F)||10-6K-1||4.3|
|Typical film thickness||µm||100|
|Sodium||< 0,05||Copper||< 0,01|
|Magnesium||< 0,01||Zinc||< 0,05|
|Aluminum||< 0,04||Gallium||< 0,05|
|Phosphorus||< 0,01||Germanium||< 0,05|
|Sulfur||< 0,04||Arsenic||< 0,005|
|Potassium||< 0,05||Indium||< 0,01|
|Calcium||< 0,05||Tin||< 0,01|
|Titanium||< 0,005||Antimony||< 0,01|
|Vanadium||< 0,001||Tungsten||< 0,01|
|Chromium||< 0,05||Tellurium||< 0,01|
|Manganese||< 0,005||Lead||< 0,01|
|Iron||< 0,01||Bismuth||< 0,01|
The requirements of the market and our customers for SiC coatings were constantly evolving during the last few years, with demands for tighter coating specifications and for product consistency. SGL Carbon, in collaboration with one of the world's leading universities on CVD coatings, has developed an Advanced SiC coating to meet current and future customer requirements. The newly developed SIGRAFINE Advanced SIC coating offers significant advantages over standard SiC coatings:
- Improved uniformity
- Improved material consistency
- Improved lifetime
- Higher chip yields possible through improved photoluminescence
With the new SIGRAFINE Advanced SiC coating, we support our customers' developments with regard to the requirements of a constantly changing LED market.
Silicon carbide is deposited as thin layers on SGL Carbon's isostatic graphite using CVD (chemical vapor deposition). The deposition typically takes place at temperatures of 1,200-1,300 °C. The thermal expansion behavior of the substrate material should be adapted to the SiC coating to minimize thermal stresses.